VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Constructing magnetically recoverable CdS/CaFe2O4 P–N heterojunctions for enhanced photoelectrochemical properties towards H2 evolution reaction

A novel CdS/CaFe₂O₄ (CS/CFO) heterogeneous p-n junction was created by thermal deposition of CaFe₂O₄ nanoparticles on CdS rods. The CS/CFO hetero-structured photocatalysts exhibited increasingly efficient visible light harvesting compared to the bare CdS. The CS/CFO composites also presented higher photocurrent and slower decay of photoluminescence, suggesting a better separation of the photo-generated electrons and holes. The photocatalytic H₂ evolution quantity on the optimized CS/CFO composite from water in the presence of ethanol was up to 2200 μmol after 3-h visible light illumination, which is more than twice that of the pristine CdS. The chemical interaction between CdS and CaFe₂O₄ was confirmed by the shifts in the XPS peaks, which made it possible for the charge carriers to transfer across the p-n junction interface. This research highlights the importance of forming an interfacial p-n heterojunction between two semiconductors for efficient charge separation and improved photocatalytic performance.     

Graphitic-C3N4/ZnCr-layered double hydroxide 2D/2D nanosheet heterojunction: Mesoporous photocatalyst for advanced oxidation of azo dyes with in situ produced H2O2

In this study the constructional modification of Graphitic carbon nitride nanosheet (GCN-ns) has been made with the aid of ZnCr layered double hydroxide (ZC-LDH) in a unique 2D-2D structure to enhance its visible light absorption. Optical and morphological study presents successful incorporation of ZC-LDH on the surface of GCN-ns. Through adjusting of GCN-ns by ZC-LDH lower recombination rate of e^?/h⁺ pairs, longer lifetimes and an increase in contamination reduction was brought out. The binary nanocomposite was employed to effectively degrade Rhodamine B under UV/vis light irradiation. The improvement in photocatalytic abilities was proven to be related to in situ self-production of H₂O₂ on GCN-ns/ZC-LDH surface by Xe light irradiation which in return accounts for additional hydroxide radical generation. Radical quenching experiments specified the main active species involved while the consequent step-scheme (S-scheme) charge transfer mechanism was proposed.     

Construction of BiVO4 microspheres sensitized TiO2 NTAs for the enhanced photocatalytic mineralization of organic dyes

In the present work, BiVO₄ microspheres were deposited on TiO₂ NTAs via the solvothermal method using urea as the mineralizer. The binary heterojunction formation significantly enhanced the solar response region and intensity, and the electron transfer path was built at the interface of two semiconductors, which was the main reason for the enhanced photoelectrochemical and photocatalytic performances. The S-2 electrode prepared with urea concentration of 2 mol/L displayed the high visible light photocurrent of 73.76 μA/cm² and photovoltage of −0.30 V. Furthermore, the S-2 photocatalyst also showed excellent photocatalytic decoloration ability of MO, RhB and MB dyes, and the corresponding decomposition efficiencies were 55.82%, 41.62% and 89.90% under solar irradiation. Except for the organic dyes, Cr(VI) ions also could be reduced into Cr(III), and the photocatalytic efficiency achieved 74.05% after 3 h solar irradiation. The active group and photocatalytic mechanism were proposed to illuminate the essential reason. The experimental results indicated that the novel BiVO₄/TiO₂ NTAs with binary heterojunction are attractive photocatalysts for the dyeing and printing water treatment.     

Visible light-activated degradation of microcystin-LR by ultrathin g-C3N4 nanosheets-based heterojunction photocatalyst

Microcystins (MCs) is a harmful toxin generated by blue-green algae in water, which has seriously threatened the ecological safety of water and human body. It is urgent to develop new catalysts and techniques for the degradation of MCs. A feasible electrostatic self-assembly method was carried out to synthesize BiVO₄/g-C₃N₄ heterojunction photocatalyst with highly efficient photocatalytic ability, where BiVO₄ nanoplates with exposed {010} facets anchored to the g-C₃N₄ ultrathin nanosheets. The morphology and microstructure of the heterojunction photocatalysts were identified by XRD, SEM, TEM, XPS, and BET. The g-C₃N₄ nanosheets have huge surface area over 200 m²/g and abundant mesoporous ranging from 2-20 nm, which provides tremendous contact area for BiVO₄ nanoplates. Meanwhile, the introduction of BiVO₄ led to red-shift of the absorption spectrum of photocatalyst, which was characterized by UV-vis diffuse reflection spectroscopy (DRS). Compared with pure BiVO₄ and g-C₃N₄, the BiVO₄/g-C₃N₄ heterojunction shows a drastically enhanced photocatalytic activity in degradation of microcystin-LR (MC-LR) in water. The MC-LR could be removed within 15 minutes under the optimal ratio of BiVO₄/g-C₃N₄. The outstanding performance of the photocatalyst is attributed to synergetic effect of interface Z-scheme heterojunction and high active facets {010} of BiVO₄ nanoplates, which provides an efficient transfer pathway to separate photoinduced carriers meanwhile endows the photocatalysts with strong redox ability.     

High-efficiency Silicon Solar Cells: A Review

Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells.     

Tuning the Dimensions of C60‐Based Needlelike Crystals in Blended Thin Films

A new ordered structure of the C₆₀ derivative PCBM ([6‐6]‐phenyl C₆₁‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.